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FQD13N10L Datasheet, MOSFET, Fairchild Semiconductor

FQD13N10L Datasheet, MOSFET, Fairchild Semiconductor

FQD13N10L

datasheet Download (Size : 548.81KB)

FQD13N10L Datasheet
FQD13N10L

datasheet Download (Size : 548.81KB)

FQD13N10L Datasheet

FQD13N10L Features and benefits

FQD13N10L Features and benefits


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* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche teste.

FQD13N10L Application

FQD13N10L Application

such as high efficiency switching DC/DC converters, and DC motor control. TM Features
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FQD13N10L Description

FQD13N10L Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery

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TAGS

FQD13N10L
100V
LOGIC
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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